g eneral d escription the is n - channel mos field effect transistor designed for high current switching applications. rugged e as capability and ultra low r ds(on) is suitable for pwm, load s witching especially for e - bike controller applications. features v ds =70v i d =80a@ v gs = 10 v r ds(on) <7.2m @ v gs = 10 v special d esigned for e - bike c ontroller application u ltra l ow on - resistance h igh uis and uis 100% t est application 48v e - bike c ontroller a pplications hard switched and high frequency circuits unint erruptible power supply table 1. a bsolute maximum r atings (ta=25 ) symbol parameter value unit v ds drain - source voltage ( v gs= 0v 70 v v gs gate - source voltage ( v ds= 0v) 25 v i d (dc) drain current (dc) at tc=25 80 a i d (dc) drain current (dc) at tc=100 56 a i dm (pluse) drain current - continuous@ current - pulsed (note 1 ) 320 a dv/dt peak d iode r ecovery v ol tage 30 v /n s p d maximum power dissipation (tc=25 ) 100 w derating factor 0.66 w/ e as single p ulse a valanche e nergy (note 2 ) 410 mj t j ,t stg operating junction and storage temperature range - 55 to 175 note s 1. repetitive rating: pulse width limited by maximum junction temperature 2. e as condition: t j =25 , v dd =33v,v g =10v,i d =40 .5a schematic diagram v ds = 70 v i d = 80 a r ds(on) = 5.9 m ? ? DK48N78 pb free plating product DK48N78 pb 70v,80a n-channel trench process power mosfet ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/5 rev.05 DK48N78 g d s DK48N78 (to-220 heatsink)
table 2. t hermal characteristic symbol parameter value unit r ? jc thermal resistance,junction - to - case 1.5 / w table 3. e lectrical characteristics (ta=25 unless otherwis e noted) symbol parameter condition s min typ max unit on/off states bv dss drain - source breakdown voltage v gs =0v i d =250a 70 v i dss zero gate voltage drain current (tc=25 ) v ds = 68 v,v gs =0v 1 a i dss zero gate voltage drain current (tc=125 ) v ds = 6 8 v,v gs =0v 10 a i gss gate - body leakage current v gs = 25 v,v ds =0v 100 na v gs(th) gate threshold voltage v ds =v gs ,i d =250a 2 4 v r ds(on) drain - source on - state resistance v gs = 10 v, i d =4 0 a 5.9 7.2 m dynamic characteristics g fs forward transconductan ce v ds = 10 v,i d = 15 a 20 s c iss input capacitance 3483 p f c oss output capacitance 459 p f c rss reverse transfer capacitance v ds = 25 v,v gs =0v, f =1.0mhz 214 p f q g total gate charge 82 nc q gs gate - source charge 16.2 nc q gd gate - drain charge v ds = 50 v,i d = 40 a, v gs = 10 v 36.7 nc s witching t imes t d(on) turn - on delay time 11 ns t r turn - on rise time 13 ns t d(off) turn - off delay time 22 ns t f turn - off fall time v dd = 3 0v,i d = 2 a ,r l =15 v gs = 10 v,r g = 2.5 27 ns source - d rain d iode characteristics i sd source - drain current(body diode) 80 a i sdm pulsed source - drain current(body dio de) 320 a v sd forward on voltage (note 1 ) t j =25 ,i sd =40a,v gs =0v 0.69 0.95 v t rr reverse recovery time (note 1 ) 40 ns q rr reverse recovery charge (note 1 ) t j =25 ,i f =75a di/dt=100a/ s 81 nc t on forward turn - on time intrinsic turn - on time is negligi ble(turn - on is dominated by l s +l d ) note s 1 . pulse test: pulse width 300s, duty cycle 1.5 % , r g =25 , starting t j =25 ? DK48N78 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/5 rev.05
test c i r c uit 1 e a s t e s t circuits 2 gate c h a rge t est cir c uit: 3 s w itch time test circui t ? DK48N78 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 3/5 rev.05
typical electrical and t h ermal charac t eristics (curves) figure1. safe operating area figure2. source - drain diode forward voltage figure3. output c haracteristics figure4. transfer characteristics figure5. static d rain - s ource o n r esistance figure6. r ds(on) vs junction temperature r ds(on) (m ) i d (a ) i s - source current (a) i d (a) v ds (volts) v sd (volts) i d (a) v ds (volts) i d (a) v gs (volts) r ds(on) 10us 1ms 10ms dc t c = 2 5 ? DK48N78 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 4/5 rev.05
figure7. b v dss vs junction temperature figure8. v gs(th) vs junction tempera ture temperature temperature temperature figure9. gate c harge w aveforms figure10. capacitance figure11. normalized maximum transient thermal impedance square w ave pluse dur a tion(sec) v ds drai n - source voltage (v) transient thermal impedance r (t), normalized effective c capacitance (pf) qg gate charge (nc) v gs (volts) ? DK48N78 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 5/5 rev.05
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